Other Applications Solutions Examples
DRAM TiN Electrode
Challenge
- TiN forms defects in certain composition states
VeraFlex II Solution
- Utilize thickness, composition and surface condition capabilities to monitor for Ti/N ratio
and monitor for C
Flash Memory N-bonding
Challenge
- Flash memory cell leakage performance degrades as Si-N chemical state is formed
VeraFlex II Solution
- Utilize thickness, composition and bonding states capabilities to avoid making Si-N and to monitor for Si – O, N – O bonds
High K Capacitor
Challenge
- Control a multilayer ALD film: HfOx – AlOx – SiOx
VeraFlex II Solution
- Utilize thickness, composition and interfaSce quality capabilities to control thickness, SiO interface and composition
Multilayer Electrode Films
Challenge
- TiN forms defects in certain composition states, and contamination from process leads to yield loss
VeraFlex II Solution
- Utilize thickness, composition and surface condition capabilities to control Ti/N ratio and
Al%, and to monitor for C, Cl, F
Contact ReVera to discuss the challenges of your specific applications, and the advantages of the VeraFlex II production metrology system to your production processes.