Media Coverage and Awards
SEMICON West 2007 Executive Outlook
By Staff -- Semiconductor International, 6/15/2007
Dave Ring, CEOIndustry executives expect to see increased emphasis on energy conservation, both with tool efficiency and in fab operations, and, on a broader scale, in the development of processes for solar cell fabrication. At the device level, leading-edge 45 nm logic devices are beginning to incorporate high-k dielectrics and metal gates, while the big news in the back end has to do with chip-to-chip integration using through-silicon vias (TSVs), package-on-package (PoP) and other small form-factor approaches.
With semiconductor manufacturers beginning their migration toward 45 nm production, the process challenges associated with that node are likely to dominate the discussion at this year’s show. Specifically, the balance of integrating new materials into a process that involves advanced new equipment represents one of the more daunting tasks. Manufacturers are also wrestling with materials that are difficult to characterize and more susceptible to defects. Increasingly, they are discovering that what they don’t know can hurt them. And, the optical tools they relied on for multiple process generations are falling short on providing the rigorous data required to confidently manage their materials integration.
Consequently, they’re turning to techniques that allow them to more efficiently measure, monitor and control critical materials properties. What used to be a stalwart lab function has now moved to the fab, where real-time X-ray metrology tools provide more accurate, vital data on film thickness, composition, profile, bonding states, interface quality and surface condition. The quality of the data is enhanced by direct measurement techniques instead of the “inferred” data generated by optical technologies. Such X-ray tools — first deployed to successfully characterize nitrided gate oxide films -- are now being evaluated for their potential to more precisely characterize films in other advanced application areas.
This article was edited from the published version to exclude sections on additional companies. The full article is available on Semiconductor.net.