Capabilities
Measure, Monitor and Control
ReVera systems provide the right capabilities to measure, monitor, and control critical material properties for 32nm, 28nm, 22nm and beyond.
Thickness: Measuring the distance from the top of a film to the bottom
Advanced semiconductor films are often created from new, compositionally complex materials. Measuring and controlling these films requires innovative measurement techniques capable of measuring the materials down to the mono-layer thickness regime.
Composition: Measuring the number and type of atoms in a material
As more and more combinations of materials are used in advanced semiconductor manufacturing, composition variation can be a leading indicator of a process problem. Measuring and controlling these materials to the atomic scale requires innovative measurement technologies sensitive to variations at the elemental level.
Profile: Measuring the concentration of an element between the top and bottom of a film
Measuring and controlling the bulk properties of a film, such as thickness and composition, is often not enough. In a significant number of critical process steps, controlling the variation of the film composition through the depth of the film is a key yield enhancing capability.
Bonding States: Measuring how atoms are combined with one another to form a material
The complex chemical reactions that form the central bonds of critical film stack materials are leading to numerous problems not previously of concern. In many cases, optimal yield and device performance from a film stack results from the selection and close control of one particular type of chemical bond.
Interface Quality: Measuring the condition of the layers between two films
The processes used to deposit and manipulate advanced semiconductor films are extremely complex. The success of these complex processes often relies on the character of the interface between where one film starts and another layer begins.
Surface Condition: Measuring the purity of a surface
Advanced semiconductor films are often created from new, compositionally complex materials. Measuring and controlling these films requires innovative measurement techniques capable of measuring the materials down to the mono-layer thickness regime.