Taking advantage of the information found in the energy distribution of inelastically scattered electrons, ReVera systems employ zMAX depth distribution technology to provide precise and accurate in-line determination of the distribution of critical elements, such as nitrogen in SiON gate dielectrics.

As illustrated in the diagram to the right, ReVera systems with zMAX technology are capable of tracking changes in the nitrogen depth distribution with changes in process conditions in critical gate dielectrics.

Additionally, zMAX has been shown shown to track the behavior of key transistor electrical parameters.  This capability has enabled device manufacturers to dramatically reduce the cycle time needed to develop, optimize and and control next generation transistor processes.